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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1401 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 35 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance 3.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 150 V Drain to Source Voltage 150 V Gate to Source Voltage 30V o -65 o C to 150o C 2A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 10 75 TYP 35WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.1 A, Vds = 50.0 V, F = 400 MHz Idq = 0.1 A, Vds = 50.0 V, F = 400 MHz Idq = 0.1 A, Vds = 50.0 V, F = 400 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 0.8 1 4.8 45 2.2 20 MIN 125 2 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.05 A, Vds = 50.0 V, Vds = 0 V, Ids = 0.1 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 2 A Vgs = 20V, Vds = 10V Vds = 50.0 V, Vgs = 0V, F = 1 MHz Vds = 50.0 V, Vgs = 0V, F = 1 MHz Vds = 50.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com F1401 POUT VS PIN GRAPH F-1401 PIN VS POUT F=400 MHZ; IDQ=0.2A; VDS=50.0V 40 35 30 25 20 15 10 Efficiency = 75% 5 0 0 0.5 1 1.5 2 PIN IN WATTS POUT GAIN CAPACITANCE VS VOLTAGE F1E 1 DIE CAPACITANCE 16 15 14 13 12 11 10 9 8 2.5 3 3.5 4 100 Ciss Coss 10 Crss 1 0 5 10 15 20 25 30 35 40 45 50 VDS IN VOLTS IV CURVE F E 1 D IV 1 IE 5 4.5 4 3.5 ID IN AMPS 3 ID AND GM VS VGS F1E 1 DIE ID & GM Vs VG 10.00 Id in amps; Gm in mhos Id 1.00 2.5 2 gM 0.10 1.5 1 0.5 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 V SINV L S D OT Vg=6v vg=8v 14 0 16 18 vg=12v 20 0.01 0 2 4 6 8 10 12 14 16 18 Vgs in Volts S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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